| PART |
Description |
Maker |
| 86100C |
Wide-Bandwidth Oscilloscope Mainframe and Modules
|
Agilent(Hewlett-Packard)
|
| TJM4558 TJM4558C TJM4558I TJM4558CN TJM4558CD TJM4 |
Wide bandwidth dual bipolar op-amps
WIDE BANDWIDTH DUAL BIPOLAR OPERATIONAL AMPLIFIERS
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| TSX561 TSX561A TSX561AILT TSX564IPT TSX561IYLT TSX |
Micropower, wide bandwidth 16V CMOS op-amps
Micropower, wide bandwidth, 16 V CMOS operational amplifiers
|
ST Microelectronics
STMicroelectronics
|
| LTC1750 LTC1750CFW LTC1750-15 |
14-Bit, 80Msps Wide Bandwidth ADC
14-Bit, 80Msps Wide Bandwidth ADC; Package: SSOP; No of Pins: 48; Temperature Range: 0°C to 70°C
|
Linear Technology
LINEAR TECHNOLOGY CORP
|
| K4H511638C-UC K4H511638C-UCA2 K4H511638C-UCB0 K4H5 |
8-Bit, 20 kSPS ADC Serial Out, uProcessor Periph./Standalone, Rem. Op w/Ser. Data Link, Mux option 14-SOIC 荤的512Mb芯片DDR SDRAM内存规格
Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-PDIP -40 to 125 荤的512Mb芯片DDR SDRAM内存规格
512Mb C-die DDR SDRAM Specification 荤的512Mb芯片DDR SDRAM内存规格
Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125 荤的512Mb芯片DDR SDRAM内存规格
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125 荤的512Mb芯片DDR SDRAM内存规格
8-Bit, 392 kSPS ADC Parallel Out, Microprocessor Peripheral, On-Chip Track-and-Hold, Single Channels 20-PDIP 荤的512Mb芯片DDR SDRAM内存规格
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 1N1190 JANTXV1N3768R 1N1184 1N1184R 1N1186 1N1186R |
Standard Rectifier (trr more than 500ns)
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 16-PDIP -40 to 125 35 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 16-SOIC -40 to 125 35 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
Military Silicon Power Rectifier 35 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
Military Silicon Power Rectifier 35 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AB
Single Wide-Bandwidth High-Output Drive Single-Supply Op Amp With Shutdown 8-SOIC 0 to 70 35 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 16-PDIP -40 to 125 35 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 20-HTSSOP -40 to 125 35 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
|
http://
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
MICROSEMI CORP-LAWRENCE
|
| HMC587LC4B |
Wide Tuning Bandwidth
|
Analog Devices
|
| DQF-302 |
WIDE BANDWIDTH 20 - 60 MHz
|
SYNERGY MICROWAVE CORPORATION
|
| C11184 |
WIDE BANDWIDTH AMPLIFIER UNIT
|
HAMAMATSU
|
| RFSA2113SR RFSA2113PCK-410 RFSA2113SQ RFSA2113TR13 |
Wide Bandwidth Voltage Controlled Attenuator
|
RF Micro Devices
|
| MSK601 MSK601B |
WIDE BANDWIDTH HIGH VOLTAGE AMPLIFIER
|
M.S. Kennedy Corp.
|
